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| x P-Channel Power MOS FET x DMOS Structure x Low On-State Resistance: 0.48 MAX x Ultra High-Speed Switching x SOT-23 Package s Applications q Notebook PCs q Cellular and portable phones q On-board power supplies q Li-ion battery systems s General Description The XP152A01D8MR is a P-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. The small SOT-23 package makes high density mounting possible. s Features Low on-state resistance: Rds(on)=0.48(Vgs=-4.5V) Rds(on)=0.80(Vgs=-2.5V) Ultra high-speed switching Operational Voltage: -2.5V High density mounting: SOT-23 u s Pin Configuration D 3 s Pin Assignment PIN NUMBER 1 2 3 PIN NAME G S D FUNCTION Gate Source Drain 1 G 2 S SOT-23 (TOP VIEW) s Equivalent Circuit 3 s Absolute Maximum Ratings PARAMETER Drain-Source Voltage Gate-Source Voltage Drain Current (DC) Drain Current (Pulse) Reverse Drain Current SYMBOL Vdss Vgss Id Idp Idr Pd Tch Tstg RATINGS -20 12 -0.5 -1.5 -0.5 0.5 150 -55~150 Ta=25: UNITS V V A A A W : : 1 2 Continuous Channel Power Dissipation (note) Channel Temperature Storage Temperature P-Channel MOS FET (1 device built-in) Note: When implemented on a glass epoxy PCB s Electrical Characteristics DC characteristics PARAMETER Drain Cut-off Current Gate-Source Leakage Current Gate-Source Cut-off Voltage Drain-Source On-state Resistance (note) Forward Transfer Admittance (note) Body Drain Diode Forward Voltage Note: Effective during pulse test. Ta=25: SYMBOL Idss Igss Vgs(off) Rds(on) Yfs Vf CONDITIONS Vds=-20V, Vgs=0V Vgs=12V, Vds=0V Id=-1mA, Vds=-10V Id=-0.3A, Vgs=-4.5V Id=-0.3A, Vgs=-2.5V Id=-0.3A, Vds=-10V If=-0.5A, Vgs=0V MIN TYP MAX -10 10 -0.5 0.36 0.6 1 -0.8 -1.1 0.48 0.8 UNITS A A V S V Dynamic characteristics PARAMETER Input Capacitance Output Capacitance Feedback Capacitance SYMBOL Ciss Coss Crss CONDITIONS Vds=-10V, Vgs=0V f=1MHz MIN TYP 180 100 35 MAX Ta=25: UNITS pF pF pF u Switching characteristics PARAMETER Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time SYMBOL td (on) tr td (off) tf Vgs=-5V, Id=-0.3A Vdd=-10V CONDITIONS MIN TYP 10 15 30 70 MAX Ta=25: UNITS ns ns ns ns Thermal characteristics PARAMETER Thermal Resistance (channel-surroundings) SYMBOL Rth (ch-a) CONDITIONS Implement on a glass epoxy resin PCB MIN TYP 250 MAX UNITS :/W XP152A01D8MR Characteristics Drain Current vs. Drain /Source Voltage Pulse Test, Ta=25: Drain Current vs. Gate/Source Voltage Pulse Test, Vds=-10V Drain Current:Id (A) Drain/Source Voltage:Vds (V) Drain Current:Id (A) Gate/Source Voltage:Vgs (V) Drain/Source On-State Resistance vs. Gate/Source Voltage Pulse Test, Ta=25: Drain/Source On-State Resistance vs. Drain Current Pulse Test, Ta=25: Drain /Source On-State Resistance :Rds (on) () u Gate/Source Voltage:Vgs (V) Drain/Source On-State Resistance :Rds (on) () Drain Current:Id (A) Drain/Source On-State Resistance vs. Ambient Temp. Pulse Test, Ta=25: Gate/Source Cut Off Voltage Variance vs. Ambient Temp. Ambient Temperature:Topr (:) Gate/Source Cut Off Voltage Variance :Vgs (off) Variance (V) Drain/Source On-State Resistance :Rds (on) () Ambient Temperature:Topr (:) XP152A01D8MR Characteristics Drain/Source Voltage vs. Capacitance Vgs=0V, f=1MHz Switching Time vs. Drain Current Vgs=-5V, Vdd -10V, PW=10sec. duty 1% Capacitance:Ciss, Coss, Crss (pF) Drain/Source Voltage:Vds (V) Switching Time:t (ns) Drain Current:Id (A) Gate/Source Voltage vs. Gate Charge -10 Gate/Source Voltage:Vgs (V) Vds=-10V, Id=-0.5A Reverse Drain Current vs. Source/Drain Voltage -1.5 Reverse Drain Current:Id (A) Pulse Test, Ta=25: -8 u Vgs=-4.5V -1 -2.5V -6 -4 -0.5 0, 4.5V -2 0 0 2 4 6 8 Gate Charge:Qg (nc) 0 0 -0.2 -0.4 -0.6 -0.8 -1 Source/Drain Voltage:Vsd (V) Standardized Transition Thermal Resistance vs. Pulse Width 10 1 0.1 0.01 0.001 0.0001 0.0001 Rth (ch-a)=250C/W, (Implemented on a glass epoxy PCB) Single Pulse 0.001 0.01 0.1 Pulse Width:PW (sec) 1 10 100 |
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